DEVICE-LEVEL SIMULATION OF Rb2InSbCl6 DOUBLE PEROVSKITES FOR EFFICIENT SOLAR CELL APPLICATIONS

Abstract

The investigation of lead-free double perovskites for third generation photovoltaic uses has been spurred by the quest for effective and eco-friendly photovoltaic materials. In this study, SCAPS-1D simulations were employed to estimate the photovoltaic efficiency of double perovskites. This material was used as absorber layers in simulated solar cell architectures because of its excellent optical qualities and appropriate bandgap. To maximise the device performance, various electron transport layers (TiO₂, IGZO, and SnO₂) were examined. For Au/CuO/ /ETL/FTO designs, photovoltaic metrics for instance open-circuit voltage , short-circuit current density , fill factor (FF), power conversion efficiency (eta), and quantum efficiency (QE) were assessed. TiO₂ showed the most promising performance among the examined transport layers, indicating the possibility of  double perovskites as an effective lead-free absorber material for the future photovoltaic applications.